unisonic technologies co., ltd up1851 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r207-018.b high current (high performance) transistors ? features * 5 a continuous current , up to 15 a peak current * very low saturation voltages * excellent gain characteristics specified up to 10a * p d = 3w sot-223 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 up1851l-aa3-r UP1851G-AA3-R sot-223 b c e tape reel
up1851 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-018.b ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -6 v peak pulse current i cm -15 a continuous collector current i c -5 a power dissipation (t a =25c) p d 3 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a -100 -140 v collector-emitter breakdown voltage bv cer i c =-1 a, r b Q 1k ? -100 -140 v collector-emitter breakdown voltage bv ceo i c =-10ma (note) -60 -90 v emitter-base breakdown voltage bv ebo i e =-100 a -6 -8 v collector cut-off current i cbo v cb =-80v -150 na collector cut-off current i cer v cb =-80v, r 1k ? -150 na emitter cut-off current i ebo v eb =-6v -50 na collector-emitter sa turation voltage (note) v ce(sat) i c =-100ma, i b =-10ma -20 -50 mv i c =-1a, i b =-100ma -85 -140 i c =-2a, i b =-200ma -155 -210 i c =-5a, i b =-500ma -370 -460 base-emitter satura tion voltage v be ( sat ) i c =-5a, i b =-500ma (note) -1080 -1240 mv base-emitter turn -on voltage v be ( on ) i c =-5a, v ce =-1v (note) -935 -1070 mv dc current gain (note) h fe i c =-10ma, v ce =-1v 100 200 i c =-2a, v ce =-1v 100 200 300 i c =-5a, v ce =-1v 75 90 i c =-10a, v ce =-1v 10 25 transition frequency f t i c =-100ma, v ce =-10v, f=50mhz 120 mhz output capacitance c obo v cb =-10v, f=1mhz 74 pf switching times t on i c =-2a, i b1 =-200ma 82 ns t off i b2 =200ma, v cc =-10v 350 note: pulse width=300 s. duty cycle 2%
up1851 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-018.b ? typical characteristics 0 0.2 0.6 1.0 1.2 1.6 0.01 0.1 1 10 collector-emitter saturation voltage vs. collector current collector current, i c (a) 0.4 0.8 1.4 20 0.001 t a =25 o c i c /i b =10 i c /i b =50 0 0.2 0.6 1.0 1.2 1.6 0.01 0.1 1 10 collector-emitter saturation voltage vs. collector current collector current, i c (a) 0.4 0.8 1.4 20 0.001 -55 o c +25 o c +175 o c i c /i b =10 0.2 0.6 1.4 0.01 0.1 1 10 dc current gain vs. collector current collector current, i c (a) dc current gain, h fe 1.0 0.8 1.2 0.01 0.1 1 10 collector current, i c (a) base-emitter saturation voltage, v be(sat) (v) 1.6 0.4 0 0.4 0.8 1.2 1.6 0.6 1.0 1.4 20 v ce =1v +100 o c -55 o c +25 o c base-emitter saturation voltage vs. collector current 0.001 i c /i b =10 +25 o c -55 o c 20 0.2 0 +100 o c +175 o c 0.001 300 200 100 typical gain, h fe 1 1 10 100 collector voltage, v ce (v) 10 single pulse test at t a =25c 0.1 0.8 1.2 0.01 0.1 1 10 collector current, i c (a) 1.6 0.4 0.6 1.0 1.4 base-emitter turn-on voltage vs. collector current 0.001 v ce =1v +25 o c -55 o c 20 0.2 0 +100 o c +175 o c 0.1ms safe operating area 100ms 1s d.c 0.1 100
up1851 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-018.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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